The study and use of electrical devices that source, detect, and control light are referred to as optoelectronics. Optoelectronics is centered on how light interacts with electronic materials, particularly semiconductors and InP Wafers, in a quantum mechanical way. If you want to learn more about this topic, here’s everything you need to learn about optoelectronics.
Although less effective than with III-V compound semiconductors, optical devices in Si-Ge can be used to steer, detect, modulate, and (to a limited extent) produce an optical signal. There are significant technological and financial benefits from combining silicon optoelectronic devices with the power of silicon-integrated circuit technology.
The primary problems with silicon-based detectors stem from the fact that silicon lacks an electrooptic effect and that its bandgap is too wide to allow for signal detection at the wavelengths that fiber-optic communication is most interested in (1.3 and 1.55 m).
Manufacturing technology makes the development of high-quality single-crystal Si-Ge-on insulators (SGOI) possible. This material may be used in the upcoming generation of optoelectronic devices. SGOI film on Si wafer can be produced using layer transfer and Ge condensation. Rapid melt growth techniques can be employed to create crystals without flaws, hence appropriate for SGOI integration. Integration of optoelectronic devices is made possible at a lower cost because of the design of SGOI on a typical Si substrate.
The introduction of germanium reduces the bandgap, partially due to effects brought on by strain, and increases the detection range to 1.6 m. Using resonant cavities, avalanches and p-i-n photodetectors have also been observed in waveguide-type devices. When light travels parallel to the Si/SiGe heterointerface in waveguide photodetectors, it forms photocarriers that are swept away in the shorter steep path, producing devices with a high gain bandwidth and a quick response time.
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