Most people associate innovation with great technologies, like the smartphone, but sometimes innovation in materials has the greatest impact. For example, using a GaAs wafer in photovoltaic technologies has often made them more effective.
Different materials are better for different purposes, and GaAs wafers are ideal for optoelectronic devices; the reason for this lies in their structure. To help you understand, here’s a breakdown of the unique properties of GaAs.
GaAs wafers are III-V direct bandgap semiconductors. Gallium and arsenic combine to form gallium arsenide, or GaAs.
These wafers are an excellent option for optoelectronic devices and high-frequency applications, including photovoltaic cells, microwave recurrence coordinated circuits, laser diodes, etc.
Every gallium molecule in a wafer of gallium arsenide (GaAs) is surrounded by arsenic particles. Arsenic molecules have five valence electrons, while gallium iotas have three.
This translates into every gallium and arsenic iota getting eight valence electrons in the external shell. Because of that, GaAs wafers have high electron portability, much better than that of silicon.
Moreover, their direct bandgap allows for effective emanation and retention of light in the infrared and a noticeable light range. This makes them a reasonable choice for rapid applications like microwave gadgets, fast semiconductors, and coordinated circuits (ICs).
GaAs isn’t a material that has been discovered lately; its properties in photovoltaic and high-frequency devices have been gaining popularity these past few years. However, innovations like these have the power to change the world in unexpected ways.
Here at Wafer World, we love to stay updated with everything happening in our groundbreaking industry. If you want all the latest about GaAs wafers or the semiconductor industry, give us a call!
