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50 Min.
1
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25
Material
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Silicon
GaAs
Ge
InP
Clean Room
Diameter
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101.6 mm
25.4 mm
38.1 mm
50.8 mm
76.2 mm
100.0 mm
125.0 mm
150.0 mm
200.0 mm
Type
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Round
SI.
N
P
Any
Si
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Fe
Phos
As
Sb
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CZ
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ePak
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(100)
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(100)-4
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>30
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5000000
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4e18
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2000-5000 μm
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250-500 μm
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4800-5200 μm
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5900-6100 μm
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9900-10100 μm
11300-11500 μm
11900-12100 μm
Holds1Wafer
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P/E/DTOx
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PRIME
TEST
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Clean Room
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1307
5206
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P/E
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SKU
Qty
Price
Material
Diameter
Type
Dopant
Growth Method
Orientation
Resistivity
Thickness
Surface
Grade
Comments
No items found.
SKU
1623
Qty
10
Price
$
30.00
/each
Material
Clean Room
Diameter
100.0 mm
Type
Round
Dopant
Single Wafer Shipper
Growth Method
ePak
Orientation
Lid/Base/Spring
Resistivity
Thickness
Holds1Wafer
Surface
Grade
Clean Room
Comments
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MEMS-THIN
SKU
5205
Qty
1
Price
$
200.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
140-160 μm
Surface
P/P
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1198
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1199
Qty
25
Price
$
15.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1200
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1766
Qty
25
Price
$
50.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
375-425 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
2136
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
300-350 μm
Surface
P/E
Grade
PRIME
Comments
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thick-slabs
SKU
5164
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
950-1050 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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OXIDE-NITRDE
SKU
5175
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E/DTOx
Grade
PRIME
Comments
Dry Thermal Oxide - 100A-3KA; 4-6 weeks aro
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OXIDE-NITRDE
SKU
5099
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E/Ni
Grade
PRIME
Comments
Stoichiometric LPCVD Nitride - 100A-4KA: 4-6 weeks aro
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OXIDE-NITRDE
SKU
5195
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E/WTOx
Grade
Comments
WET Thermal Oxide - 1K-20KA; 4-8 weeks aro
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MEMS-THIN
SKU
1038
Qty
1
Price
$
500.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
10-30 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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MEMS-THIN
SKU
1122
Qty
1
Price
$
400.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
40-60 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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DSP-LOW-TTV
SKU
1205
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
1-20
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
SKU
1206
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
SKU
1207
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
SKU
1620
Qty
1
Price
$
300.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
80-100 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
MEMS-THIN
SKU
1619
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
180-200 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
SKU
2231
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
300-350 μm
Surface
P/P
Grade
PRIME
Comments
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thick-slabs
SKU
5165
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
950-1050 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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DSP-LOW-TTV
SKU
5169
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
LOW-RES
OXIDE-NITRDE
SKU
5160
Qty
25
Price
$
200.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)-4
Resistivity
0.01-0.02
Thickness
200-250 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 2 weeks a.r.o
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DSP-LOW-TTV
LOW-RES
SKU
5158
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)-4
Resistivity
0.01-0.02
Thickness
325-375 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 2 weeks a.r.o
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DSP-LOW-TTV
MEMS-THIN
LOW-RES
SKU
5159
Qty
25
Price
$
200.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)-4
Resistivity
0.01-0.02
Thickness
175-225 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 2 weeks a.r.o
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LOW-RES
OXIDE-NITRDE
SKU
5142
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 1-2 weeks
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DSP-LOW-TTV
LOW-RES
SKU
2848
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
4 Week Delivery
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LOW-RES
OXIDE-NITRDE
SKU
2840
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.005-.02
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
4 Week Delivery
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DSP-LOW-TTV
LOW-RES
SKU
1622
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.005-.02
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
4 Week Delivery
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FZ
OXIDE-NITRDE
SKU
3522
Qty
25
Price
$
200.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
1-2 Week Delivery
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FZ
DSP-LOW-TTV
SKU
3528
Qty
25
Price
$
250.00
/each
Material
Silicon
Diameter
100.0 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1154
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
No Flats
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OXIDE-NITRDE
SKU
3029
Qty
25
Price
$
50.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
w/ one flat
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DSP-LOW-TTV
SKU
1156
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
No Flats
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No items found.
SKU
3035
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
w/ one flat
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MEMS-THIN
SKU
3118
Qty
1
Price
$
500.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
10-30 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
SKU
3119
Qty
1
Price
$
300.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
80-100 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
SKU
3129
Qty
1
Price
$
400.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
40-60 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
SKU
3153
Qty
1
Price
$
200.00
/each
Material
Silicon
Diameter
25.4 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
140-160 μm
Surface
P/P
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1166
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1175
Qty
25
Price
$
15.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1174
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
2400
Qty
25
Price
$
20.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
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thick-slabs
OXIDE-NITRDE
SKU
2409
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
1000-1050 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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OXIDE-NITRDE
SKU
5080
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E/DTOx
Grade
PRIME
Comments
Dry Thermal Oxide - 100A-3KA; 4-6 weeks aro
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OXIDE-NITRDE
SKU
5095
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E/Ni
Grade
PRIME
Comments
Stoichiometric LPCVD Nitride - 100A-4KA: 4-6 weeks aro
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OXIDE-NITRDE
SKU
5191
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
250-300 μm
Surface
P/E/WTOx
Grade
Comments
WET Thermal Oxide - 1K-20KA; 4-8 weeks aro
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MEMS-THIN
SKU
1015
Qty
1
Price
$
400.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
40-60 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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DSP-LOW-TTV
SKU
1169
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
MEMS-THIN
SKU
2202
Qty
1
Price
$
300.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
80-100 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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MEMS-THIN
SKU
2200
Qty
1
Price
$
500.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
10-30 μm
Surface
P/P
Grade
PRIME
Comments
4 Week Delivery
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MEMS-THIN
SKU
2253
Qty
1
Price
$
200.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
140-160 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
thick-slabs
SKU
2425
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
950-1000 μm
Surface
P/P
Grade
PRIME
Comments
4 Week Delivery
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DSP-LOW-TTV
SKU
3513
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
SKU
3514
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
1-20
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
OXIDE-NITRDE
SKU
1307
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
275-325 μm
Surface
P/E
Grade
PRIME
Comments
4 Week Delivery
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LOW-RES
OXIDE-NITRDE
SKU
5030
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111) Off 4" Towards (110)
Resistivity
.001-.005
Thickness
300-350 μm
Surface
P/E
Grade
PRIME
Comments
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LOW-RES
OXIDE-NITRDE
SKU
5032
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
.001-.005
Thickness
300-350 μm
Surface
P/E
Grade
PRIME
Comments
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LOW-RES
OXIDE-NITRDE
SKU
5138
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
300-350 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 1-2 weeks
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LOW-RES
OXIDE-NITRDE
SKU
2864
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.005-.02
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
4 Week Delivery
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LOW-RES
OXIDE-NITRDE
SKU
5034
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111) Off 4" Towards (110)
Resistivity
.005-.02
Thickness
275-325 μm
Surface
P/E
Grade
PRIME
Comments
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FZ
OXIDE-NITRDE
SKU
3518
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
250-300 μm
Surface
P/E
Grade
PRIME
Comments
6-8 Week Delivery
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FZ
DSP-LOW-TTV
SKU
3524
Qty
25
Price
$
150.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
225-275 μm
Surface
P/P
Grade
PRIME
Comments
6-8 Week Delivery
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FZ
DSP-LOW-TTV
SKU
5127
Qty
25
Price
$
150.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
4000-10000
Thickness
475-525 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 1-2 weeks
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DSP-LOW-TTV
SKU
2420
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
50.8 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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thick-slabs
OXIDE-NITRDE
SKU
1121
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
1000-1050 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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OXIDE-NITRDE
SKU
1191
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
1190
Qty
25
Price
$
15.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
2398
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
500-550 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
2856
Qty
25
Price
$
40.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
5173
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E/DTOx
Grade
PRIME
Comments
Dry Thermal Oxide - 100A-3KA; 4-6 weeks aro
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OXIDE-NITRDE
SKU
5097
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E/Ni
Grade
PRIME
Comments
Stoichiometric LPCVD Nitride - 100A-4KA: 4-6 weeks aro
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OXIDE-NITRDE
SKU
5193
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
350-400 μm
Surface
P/E/WTOx
Grade
Comments
WET Thermal Oxide - 1K-20KA; 4-8 weeks aro
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MEMS-THIN
SKU
1035
Qty
1
Price
$
400.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
40-60 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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DSP-LOW-TTV
MEMS-THIN
SKU
1120
Qty
1
Price
$
300.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
80-100 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
SKU
1177
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(111)
Resistivity
1-20
Thickness
300-350 μm
Surface
P/P
Grade
PRIME
Comments
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DSP-LOW-TTV
MEMS-THIN
SKU
2271
Qty
1
Price
$
200.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
140-160 μm
Surface
P/P
Grade
PRIME
Comments
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MEMS-THIN
SKU
2262
Qty
1
Price
$
500.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
10-30 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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DSP-LOW-TTV
SKU
2419
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
450-500 μm
Surface
P/P
Grade
PRIME
Comments
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thick-slabs
SKU
2432
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
850-1000 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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DSP-LOW-TTV
SKU
5204
Qty
25
Price
$
80.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
300-350 μm
Surface
P/P
Grade
PRIME
Comments
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LOW-RES
OXIDE-NITRDE
SKU
2855
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
4 Week Delivery
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LOW-RES
OXIDE-NITRDE
SKU
2861
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.005-.02
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
4 Week Delivery
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thick-slabs
SKU
5151
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-10
Thickness
825-875 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 2 weeks a.r.o
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No items found.
SKU
5176
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(110)
Resistivity
>100
Thickness
275-325 μm
Surface
P/P
Grade
PRIME
Comments
1-2 Weeks Lead Time
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FZ
OXIDE-NITRDE
SKU
3520
Qty
25
Price
$
150.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
350-400 μm
Surface
P/E
Grade
PRIME
Comments
1-2 Week Delivery
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FZ
DSP-LOW-TTV
SKU
3526
Qty
25
Price
$
200.00
/each
Material
Silicon
Diameter
76.2 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
>3000
Thickness
300-350 μm
Surface
P/P
Grade
PRIME
Comments
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No items found.
SKU
5197
Qty
25
Price
$
120.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
575-625 μm
Surface
P/E/WTOx
Grade
Comments
WET Thermal Oxide - 1006-3KA; 4-6 weeks aro
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MEMS-THIN
SKU
3165
Qty
1
Price
$
600.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-20
Thickness
10-30 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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OXIDE-NITRDE
SKU
3090
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-50
Thickness
550-650 μm
Surface
P/E
Grade
PRIME
Comments
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OXIDE-NITRDE
SKU
5091
Qty
25
Price
$
120.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-50
Thickness
575-625 μm
Surface
P/E/DTOx
Grade
PRIME
Comments
Dry Thermal Oxide - 100A-3KA; 4-6 weeks aro
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OXIDE-NITRDE
SKU
5011
Qty
25
Price
$
120.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-50
Thickness
575-625 μm
Surface
P/E/Ni
Grade
PRIME
Comments
Stoichiometric LPCVD Nitride - 100A-4KA: 4-6 weeks aro
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FZ
OXIDE-NITRDE
SKU
5136
Qty
25
Price
$
150.00
/each
Material
Silicon
Diameter
125.0 mm
Type
P
Dopant
Boron
Growth Method
FZ
Orientation
(100)
Resistivity
1000-5000
Thickness
875-925 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 1-2 weeks
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OXIDE-NITRDE
SKU
5166
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
950-1050 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 2-4 weeks a.r.o.
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OXIDE-NITRDE
SKU
5198
Qty
25
Price
$
120.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
650-700 μm
Surface
P/E/WTOx
Grade
Comments
WET Thermal Oxide - 1006-3KA; 4-6 weeks aro
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MEMS-THIN
SKU
3184
Qty
1
Price
$
500.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
180-200 μm
Surface
P/P
Grade
PRIME
Comments
2 Week Delivery
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thick-slabs
SKU
5167
Qty
25
Price
$
150.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
950-1050 μm
Surface
P/P
Grade
PRIME
Comments
Lead Time: 4-6 weeks
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LOW-RES
OXIDE-NITRDE
SKU
5143
Qty
25
Price
$
100.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
.001-.005
Thickness
650-700 μm
Surface
P/E
Grade
PRIME
Comments
Lead Time: 1-2 weeks
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OXIDE-NITRDE
SKU
3080
Qty
25
Price
$
60.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
500-600 μm
Surface
P/E
Grade
TEST
Comments
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OXIDE-NITRDE
SKU
5093
Qty
25
Price
$
140.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
650-700 μm
Surface
P/E/DTOx
Grade
PRIME
Comments
Dry Thermal Oxide - 100A-3KA; 4-6 weeks aro
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DSP-LOW-TTV
SKU
3084
Qty
25
Price
$
200.00
/each
Material
Silicon
Diameter
150.0 mm
Type
P
Dopant
Boron
Growth Method
CZ
Orientation
(100)
Resistivity
1-100
Thickness
500-550 μm
Surface
P/P
Grade
PRIME
Comments
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