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GaAs, InP Reclaim
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Product Details
SKU# 2326
$1100
Quantity
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Specifications
Quantity/ Lot/ Size
1
Price Per Unit
$
1100.00
Total Price
$
1100.00
Material
Ge
Diameter
76.2 mm
Type/Filter
N
Dopant
Sb
Orientation
(100)
Thickness
300-350 μm
Surface
P/P
Growth Method
CZ
Comments
SHOP SILICON WAFERS
25.4
38.1
50.8
76.2
100.0
125.0
150.0
200.0
DSP LOW TTV
FZ
LOW RES
MEMS THIN
OXIDE NITRIDE
THICK SLABS
Test Wafers
GaAs
Germanium
InP
Clean Room
